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  s1a thru s1m vishay semiconductors formerly general semiconductor document number 88711 www.vishay.com 11-feb-02 1 surface mount glass passivated rectifier reverse voltage 50 to 1000v forward current 1.0a 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) max. 0.194 (4.93) 0.208 (5.28) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band maximum ratings & thermal characteristics ratings at 25? ambient temperature unless otherwise specified. parameter symbol s1a S1B s1d s1g s1j s1k s1m unit device marking code sa sb sd sg sj sk sm maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current (see fig.1) i f(av) 1.0 a peak forward surge current 8.3ms single half sine-wave i fsm 40 30 a superimposed on rated load (jedec method) t l =110? typical thermal resistance (1) r ja 75 85 r jl 27 30 ?/w operating junction and storage temperature range t j , t stg 55 to +150 ? electrical characteristics ratings at 25? ambient temperature unless otherwise specified. parameter symbol s1a S1B s1d s1g s1j s1k s1m unit maximum instantaneous forward voltage at 1.0a v f 1.10 v maximum dc reverse current t a =25? 1.0 5.0 at rated dc blocking voltage t a =125? i r 50 a typical reverse recovery time at i f = 0.5a, i r = 1.0a, i rr = 0.25a t rr 1.8 s typical junction capacitance at 4.0v, 1mhz c j 12 pf note: (1) thermal resistance from junction to ambient and from junction to lead mounted on p.c.b. with 0.2 x 0.2 (5.0 x 5.0mm) copper pad areas dimensions in inches and (millimeters) features ?plastic package has underwriters laboratory flammability classification 94v-0 ?for surface mounted applications ?low profile package ?built-in strain relief, ideal for automated placement ?glass passivated chip junction ?high temperature soldering: 250?/10 seconds at terminals mechanical data case: jedec do-214ac molded plastic over glass passivated chip terminals: solder plated, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end weight: 0.002 oz., 0.064 g do-214ac (sma) 0.094 max. (2.38 max.) 0.220 (5.58) ref 0.066 min. (1.68 min.) 0.052 min. (1.32 min.) mounting pad layout
s1a thru s1m vishay semiconductors formerly general semiconductor www.vishay.com document number 88711 2 11-feb-02 0 10 100 1 100 10 peak forward surge current (a) number of cycles at 60 h z 0 0.6 0.8 1.2 1.0 0 20 40 60 80 100 120 140 160 average forward current (a) lead temperature ( c) 0.4 0.8 1.2 1.6 2.0 fig. 3 ?typical instantaneous forward characteristics 020 60 40 100 80 fig. 4 ?typical reverse leakage characteristics instantaneous reverse leakage current ( a) percent of rated peak reverse voltage (%) 0.4 0.2 resistive or inductive load s1(k,m) s1(a j) 0.01 0.1 10 1 80 instantaneous forward current (a) t j = 125 c t j = 25 c reverse voltage (v) junction capacitance (pf) 0.1 0.01 1 10 100 100 10 1 0.01 0.001 0.1 10 1 t j = 75 c fig. 5 ?typical junction capacitance t j = 25 c t j = 125 c t j = 25 c f = 1.0 mh z vsig = 50mvp-p fig. 1 ?forward current derating curve fig. 2 ?maximum non-repetitive peak forward surge current instantaneous forward voltage (v) 0.2 x 0.2" (5.0 x 5.0mm) thick copper pad areas t l = 110 c 8.3ms single half sine-wave (jedec method) s1(k,m) s1(a j) pulse width = 300 s 1% duty cycle t, pulse duration (sec.) transient thermal impedance ( c/w) 0.1 0.01 1 10 100 100 1,000 10 1 units mounted on 0.20 x 0.20" (5.0 x 5.0mm) x 0.5 mil. inches (0.013mm) thick copper land areas s1(k,m) s1(a j) fig. 6 ?transient thermal impedance ratings and characteristic curves (t a = 25 c unless otherwise noted)


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